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Control of a final gating charge transition by a hydrophobic residue in the S2 segment of a K(+) channel voltage sensor
It is now well established that the voltage-sensor domains present in voltage-gated ion channels and some phosphatases operate by transferring several charged residues (gating charges), mainly arginines located in the S4 segment, across the electric field. The conserved phenylalanine F(290) located...
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| Asıl Yazarlar: | , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
National Academy of Sciences
2011
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| Konular: | |
| Online Erişim: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3081032/ https://ncbi.nlm.nih.gov/pubmed/21464282 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1103397108 |
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