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Control of a final gating charge transition by a hydrophobic residue in the S2 segment of a K(+) channel voltage sensor

It is now well established that the voltage-sensor domains present in voltage-gated ion channels and some phosphatases operate by transferring several charged residues (gating charges), mainly arginines located in the S4 segment, across the electric field. The conserved phenylalanine F(290) located...

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Détails bibliographiques
Auteurs principaux: Lacroix, Jérôme J., Bezanilla, Francisco
Format: Artigo
Langue:Inglês
Publié: National Academy of Sciences 2011
Sujets:
Accès en ligne:https://ncbi.nlm.nih.gov/pmc/articles/PMC3081032/
https://ncbi.nlm.nih.gov/pubmed/21464282
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1103397108
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