Size Evolution of Ordered SiGe Islands Grown by Surface Thermal Diffusion on Pit-Patterned Si(100) Surface

The ordered growth of self-assembled SiGe islands by surface thermal diffusion in ultra high vacuum from a lithographically etched Ge stripe on pit-patterned Si(100) surface has been experimentally investigated. The total surface coverage of Ge strongly depends on the distance from the source stripe...

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Hlavní autoři: Vanacore, GiovanniMaria, Zani, Maurizio, Bollani, Monica, Colombo, Davide, Isella, Giovanni, Osmond, Johann, Sordan, Roman, Tagliaferri, Alberto
Médium: Artigo
Jazyk:Inglês
Vydáno: Springer 2010
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Special Issue Article
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC2991199/
https://ncbi.nlm.nih.gov/pubmed/21170398
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s11671-010-9781-0
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