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Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography
The three-dimensional composition profiles of individual SiGe/Si(001) islands grown on planar and pit-patterned substrates are determined by atomic force microscopy (AFM)-based nanotomography. The observed differences in lateral and vertical composition gradients are correlated with the island morph...
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| Main Authors: | , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2009
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2894314/ https://ncbi.nlm.nih.gov/pubmed/20596332 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s11671-009-9360-4 |
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