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Ultra-steep side facets in multi-faceted SiGe/Si(001) Stranski-Krastanow islands
For the prototypical Ge/Si(001) system, we show that at high growth temperature a new type of Stranski-Krastanow islands is formed with side facets steeper than {111} and high aspect ratio. Nano-goniometric analysis of the island shapes reveals the presence of six new facet groups in addition to tho...
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| Hlavní autoři: | , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Springer
2011
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3212218/ https://ncbi.nlm.nih.gov/pubmed/21711579 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-70 |
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