लोड हो रहा है...
Size Evolution of Ordered SiGe Islands Grown by Surface Thermal Diffusion on Pit-Patterned Si(100) Surface
The ordered growth of self-assembled SiGe islands by surface thermal diffusion in ultra high vacuum from a lithographically etched Ge stripe on pit-patterned Si(100) surface has been experimentally investigated. The total surface coverage of Ge strongly depends on the distance from the source stripe...
में बचाया:
| मुख्य लेखकों: | , , , , , , , |
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| स्वरूप: | Artigo |
| भाषा: | Inglês |
| प्रकाशित: |
Springer
2010
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| विषय: | |
| ऑनलाइन पहुंच: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2991199/ https://ncbi.nlm.nih.gov/pubmed/21170398 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s11671-010-9781-0 |
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