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Measurement and control of in-plane surface chemistry during the oxidation of H-terminated (111) Si

In-plane directional control of surface chemistry during interface formation can lead to new opportunities regarding device structures and applications. Control of this type requires techniques that can probe and hence provide feedback on the chemical reactivity of bonds not only in specific directi...

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Bibliografiske detaljer
Main Authors: Gokce, Bilal, Adles, Eric J., Aspnes, David E., Gundogdu, Kenan
Format: Artigo
Sprog:Inglês
Udgivet: National Academy of Sciences 2010
Fag:
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC2955082/
https://ncbi.nlm.nih.gov/pubmed/20876145
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1011295107
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