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Modification of hERG1 channel gating by Cd(2+)

Each of the four subunits in a voltage-gated potassium channel has a voltage sensor domain (VSD) that is formed by four transmembrane helical segments (S1–S4). In response to changes in membrane potential, intramembrane displacement of basic residues in S4 produces a gating current. As S4 moves thro...

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Main Authors: Abbruzzese, Jennifer, Sachse, Frank B., Tristani-Firouzi, Martin, Sanguinetti, Michael C.
格式: Artigo
語言:Inglês
出版: The Rockefeller University Press 2010
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在線閱讀:https://ncbi.nlm.nih.gov/pmc/articles/PMC2912066/
https://ncbi.nlm.nih.gov/pubmed/20660661
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1085/jgp.201010450
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