Cargando...
Modification of hERG1 channel gating by Cd(2+)
Each of the four subunits in a voltage-gated potassium channel has a voltage sensor domain (VSD) that is formed by four transmembrane helical segments (S1–S4). In response to changes in membrane potential, intramembrane displacement of basic residues in S4 produces a gating current. As S4 moves thro...
Guardado en:
| Autores principales: | , , , |
|---|---|
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
The Rockefeller University Press
2010
|
| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2912066/ https://ncbi.nlm.nih.gov/pubmed/20660661 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1085/jgp.201010450 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|