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Modification of hERG1 channel gating by Cd(2+)
Each of the four subunits in a voltage-gated potassium channel has a voltage sensor domain (VSD) that is formed by four transmembrane helical segments (S1–S4). In response to changes in membrane potential, intramembrane displacement of basic residues in S4 produces a gating current. As S4 moves thro...
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| Hauptverfasser: | , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
The Rockefeller University Press
2010
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2912066/ https://ncbi.nlm.nih.gov/pubmed/20660661 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1085/jgp.201010450 |
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