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Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates
Multilayers of InGaAs nanostructures are grown on GaAs(210) by molecular beam epitaxy. With reducing the thickness of GaAs interlayer spacer, a transition from InGaAs quantum dashes to arrow-like nanostructures is observed by atomic force microscopy. Photoluminescence measurements reveal all the sam...
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| Autors principals: | , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer
2010
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2897028/ https://ncbi.nlm.nih.gov/pubmed/20676193 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s11671-010-9645-7 |
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