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ToF-SIMS Depth Profiling of Organic Films: A Comparison between Single Beam and Dual-beam Analysis
In dual-beam depth profiling, a high energy analysis beam and a lower energy etching beam are operated in series. Although the fluence of the analysis beam is usually kept well below the static SIMS limit, complete removal of the damage induced by the high energy analysis beam while maintaining a go...
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| Autori principali: | , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
2010
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2850126/ https://ncbi.nlm.nih.gov/pubmed/20383274 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/jp9066179 |
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