A single charged voltage sensor is capable of gating the Shaker K(+) channel

類似資料

• The contribution of individual subunits to the coupling of the voltage sensor to pore opening in Shaker K channels: effect of ILT mutations in heterotetramers
  著者:: Gagnon, Dominique G., 等
  出版事項: (2010)
• Voltage Gating of Shaker K(+) Channels : The Effect of Temperature on Ionic and Gating Currents
  著者:: Rodríguez, Beatriz M., 等
  出版事項: (1998)
• Molecular basis for functional connectivity between the voltage sensor and the selectivity filter gate in Shaker K(+) channels
  著者:: Bassetto, Carlos AZ, 等
  出版事項: (2021)
• Moving gating charges through the gating pore in a Kv channel voltage sensor
  著者:: Lacroix, Jérôme J., 等
  出版事項: (2014)
• Control of a final gating charge transition by a hydrophobic residue in the S2 segment of a K(+) channel voltage sensor
  著者:: Lacroix, Jérôme J., 等
  出版事項: (2011)