Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films

This paper investigated the growth of (AlxGa1−x)2O3 thin films on semi-insulating (010) Ga2O3 substrates over the entire Al composition range (0% < x ≤ 100%) via metalorganic chemical vapor deposition (MOCVD). For the Al composition x < 27%, high quality single phase β-(AlxGa1−x)2O3 was achiev...

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Main Authors: A F M Anhar Uddin Bhuiyan, Zixuan Feng, Jared M. Johnson, Hsien-Lien Huang, Jith Sarker, Menglin Zhu, Md Rezaul Karim, Baishakhi Mazumder, Jinwoo Hwang, Hongping Zhao
Formáid: Artigo
Teanga:Inglês
Foilsithe: AIP Publishing LLC 2020-03-01
Sraith:APL Materials
Rochtain Ar Líne:http://dx.doi.org/10.1063/1.5140345
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