Absorption Amelioration of Amorphous Si Film by Introducing Metal Silicide Nanoparticles

Abstract Amorphous Si (a-Si) films with metal silicide are expected to enhance the absorption ability of pure a-Si films. In this present study, NiSi (20 nm)/Si (40 nm) and AlSi (20 nm)/Si (40 nm) bilayer thin films are deposited through radio frequency (RF) sputtering at room temperature. The influ...

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Autores principales: Hui Sun, Hsuan-Chung Wu, Sheng-Chi Chen, Che-Wei Ma Lee, Xin Wang
Formato: Artigo
Lenguaje:Inglês
Publicado: SpringerOpen 2017-03-01
Colección:Nanoscale Research Letters
Materias:
Absorption ability
Metal silicide
Amorphous silicon
RF sputtering
Acceso en línea:http://link.springer.com/article/10.1186/s11671-017-2003-2
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