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Nucleation and Growth Mechanism of Si Amorphous Film Deposited by PIAD
The nanoscale Si films with the thickness of 2 nm, 5 nm, 10 nm, and 20 nm were deposited by plasma ion assisted deposition (PIAD) on glass substrate, in order to investigate the initial stage and the nucleation and growth mechanism of the Si film. The atomic force microscopy (AFM) was used to invest...
Kaydedildi:
| Asıl Yazarlar: | , , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Hindawi Limited
2013-01-01
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| Seri Bilgileri: | Journal of Nanomaterials |
| Online Erişim: | http://dx.doi.org/10.1155/2013/383867 |
| Etiketler: |
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