Dislocation reduction in HVPE GaN via high temperature pretreatment of MOCVD-GaN/sapphire substrate
In this paper, decomposition pits on the MOCVD-GaN/sapphire substrate were fabricated by the high temperature pretreatment (HTP) process for the purpose of reducing dislocations in the subsequently grown GaN by hydride vapor phase epitaxy (HVPE). The impact of atmosphere, temperature, and time durin...
Wedi'i Gadw mewn:
| Prif Awduron: | , , |
|---|---|
| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
AIP Publishing LLC
2026-04-01
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| Cyfres: | AIP Advances |
| Mynediad Ar-lein: | https://pubs.aip.org/aip/adv/article-pdf/doi/10.1063/5.0325333/20971783/045215_1_5.0325333.pdf |
| Tagiau: |
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
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