記錄引文

Citação APA (7ª ed.)

Wang, H., Li, J., & Tian, Y. (2026). Dislocation reduction in HVPE GaN via high temperature pretreatment of MOCVD-GaN/sapphire substrate. AIP Publishing LLC.

Citação do estilo Chicago (17ª ed.)

Wang, Huihui, Jian Li, e Yuan Tian. Dislocation Reduction in HVPE GaN via High Temperature Pretreatment of MOCVD-GaN/sapphire Substrate. AIP Publishing LLC, 2026.

Citação MLA (9ª ed.)

Wang, Huihui, et al. Dislocation Reduction in HVPE GaN via High Temperature Pretreatment of MOCVD-GaN/sapphire Substrate. AIP Publishing LLC, 2026.

警告：這些引文格式不一定是100％准確.