Self-Consistent Fowler–Nordheim Tunneling Modeling in Si/GaAs Heterostructures with Optimized Nanoscale Meshing

The Fowler–Nordheim (FN) tunneling current in GaAs was systematically analyzed as a function of electric field (25–50 MV/cm) and temperature (250–400 K) to evaluate its potential for high-sensitivity structural temperature sensing. Two physical descriptions were considered: a constant electron effec...

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Autors principals:	Jo‘shqin Sh. Abdullayev, L.K. Babajanov, N.P. Babayazova, I.B. Sapaev, Kudrat Sh. Ruzmetov, E.E. Esanov
Format:	Artigo
Idioma:	Inglês
Publicat:	V.N. Karazin Kharkiv National University Publishing 2026-06-01
Col·lecció:	East European Journal of Physics
Matèries:	fowler–nordheim tunneling gaas temperature effects electric field effective mass tunneling current temperature sensor
Accés en línia:	https://periodicals.karazin.ua/eejp/article/view/28243
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