Bandgap-Engineered pSi/n-CdₓS₁₋ₓ Heterojunctions: Effect of Composition on Optoelectronic Behavior
This study provides a comprehensive analysis of the electrophysical properties of the pSi/n-CdₓS₁₋ₓ heterojunction, where the cadmium composition x varies continuously from 0 to 1. The investigation integrates theoretical modeling, numerical simulations, and experimental validation employing typical...
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| Principais autores: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
V.N. Karazin Kharkiv National University Publishing
2025-12-01
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| coleção: | East European Journal of Physics |
| Assuntos: | |
| Acesso em linha: | https://periodicals.karazin.ua/eejp/article/view/26697 |
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