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Thermal Expansion Characteristics of Planar and Radial Si/GaAs p–n Heterojunctions

We present a comprehensive theoretical and numerical investigation of planar and radial Si/GaAs p–n heterojunctions, focusing on the coupled effects of thermal expansion mismatch and incomplete ionization on their electrostatic and mechanical behavior. The two-dimensional Poisson equation is solved...

Deskribapen osoa

Gorde:
Egile Nagusiak: Jonibek Sh. Abdullayev, Madinabonu Sh. Ibragimova, Jo‘shqin Sh. Abdullayev, Ibrokhim B. Sapaev
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: V.N. Karazin Kharkiv National University Publishing 2026-03-01
Saila:East European Journal of Physics
Gaiak:
radial p–n junction
planar p–n junction
incomplete ionization
thermal expansion
cylindrical coordinate system
cartesian coordinate system
low-temperature effects
Sarrera elektronikoa:https://periodicals.karazin.ua/eejp/article/view/27596
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