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Mathematical Modeling of Electrostatic Potential in Radial and Planar p–n Junctions: A Comparative Study

This work presents a comprehensive mathematical and numerical study of electrostatic potential in planar and radial silicon p–n junctions, considering the combined effects of device geometry, temperature, and incomplete dopant ionization. A two-dimensional self-consistent solution of Poisson’s equat...

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Principais autores: Dildora A. Qalandarova, Madinabonu Sh. Ibragimova, Jo‘shqin Sh. Abdullayev, Ibrokhim B. Sapaev
Formato: Artigo
Idioma:Inglês
Publicado em: V.N. Karazin Kharkiv National University Publishing 2026-03-01
coleção:East European Journal of Physics
Assuntos:
radial p–n junction
planar p–n junction
poisson equation
electrostatic potential modeling
incomplete ionization
probability of ionization
cylindrical coordinate system
low-temperature effects
Acesso em linha:https://periodicals.karazin.ua/eejp/article/view/27548
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