On the Reliability of HZO-Based Ferroelectric Capacitors: The Cases of Ru and TiN Electrodes
Despite the great potential of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO) ferroelectrics, reliability issues, such as wake-up, fatigue, endurance limitations, imprint and retention loss, impede the implementation of HZO to nonvolatile memory devices. Herein, a study of the reliability prope...
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| 主要な著者: | , , , |
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| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
MDPI AG
2022-09-01
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| シリーズ: | Nanomaterials |
| 主題: | |
| オンライン･アクセス: | https://www.mdpi.com/2079-4991/12/17/3059 |
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