Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation
Herein, boron implantation technique was employed to engineer the Schottky barrier height (SBH) of Ti/n-type silicon junction (Ti/n-Si). The Ti/n-Si Schottky diodes with boron doses of 4, 5.4 and 6.6´1012 cm-2 at the energy of 25 keV were fabricated with improved rectification and their effective SB...
I tiakina i:
| Ngā kaituhi matua: | , , , , |
|---|---|
| Hōputu: | Artigo |
| Reo: | Inglês |
| I whakaputaina: |
Walailak University
2018-11-01
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| Rangatū: | Walailak Journal of Science and Technology |
| Ngā marau: | |
| Urunga tuihono: | http://wjst.wu.ac.th/index.php/wjst/article/view/5968 |
| Ngā Tūtohu: |
Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!
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