Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation
Herein, boron implantation technique was employed to engineer the Schottky barrier height (SBH) of Ti/n-type silicon junction (Ti/n-Si). The Ti/n-Si Schottky diodes with boron doses of 4, 5.4 and 6.6´1012 cm-2 at the energy of 25 keV were fabricated with improved rectification and their effective SB...
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| Автори: | , , , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
Walailak University
2018-11-01
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| Серія: | Walailak Journal of Science and Technology |
| Предмети: | |
| Онлайн доступ: | http://wjst.wu.ac.th/index.php/wjst/article/view/5968 |
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