Role of Schottky Barrier Height Modulation on the Reverse Bias Current Behavior of MIS(p) Tunnel Diodes
Current and capacitance characteristics of Al/SiO<sub>2</sub>/Si(p) metal-insulator-semiconductor tunnel diode (MISTD) with oxide thickness in the range of about 2–4 nm were fabricated and studied in detail in this work. We found that the saturation reverse bias current will increase with oxi...
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| Asıl Yazarlar: | , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
IEEE
2021-01-01
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| Seri Bilgileri: | IEEE Access |
| Konular: | |
| Online Erişim: | https://ieeexplore.ieee.org/document/9641778/ |
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