Role of Schottky Barrier Height Modulation on the Reverse Bias Current Behavior of MIS(p) Tunnel Diodes
Current and capacitance characteristics of Al/SiO<sub>2</sub>/Si(p) metal-insulator-semiconductor tunnel diode (MISTD) with oxide thickness in the range of about 2–4 nm were fabricated and studied in detail in this work. We found that the saturation reverse bias current will increase with oxi...
Gorde:
| Egile Nagusiak: | , , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
IEEE
2021-01-01
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| Saila: | IEEE Access |
| Gaiak: | |
| Sarrera elektronikoa: | https://ieeexplore.ieee.org/document/9641778/ |
| Etiketak: |
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