Graphene on SiC(0001) inspected by dynamic atomic force microscopy at room temperature
We investigated single-layer graphene on SiC(0001) by atomic force and tunneling current microscopy, to separate the topographic and electronic contributions from the overall landscape. The analysis revealed that the roughness evaluated from the atomic force maps is very low, in accord with theoreti...
-д хадгалсан:
| Үндсэн зохиолчид: | , , , , |
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| Формат: | Artigo |
| Хэл сонгох: | Inglês |
| Хэвлэсэн: |
Beilstein-Institut
2015-04-01
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| Цуврал: | Beilstein Journal of Nanotechnology |
| Нөхцлүүд: | |
| Онлайн хандалт: | https://doi.org/10.3762/bjnano.6.93 |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
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