Effects of Al on epitaxial graphene grown on 6H-SiC(0001)
Aluminum was deposited on epitaxial monolayer-grown graphene on SiC(0001). The effects of annealing up to 1200 °C on the surface and interface morphology, chemical composition, and electron band structure were analyzed in situ by synchrotron-based techniques at the MAX Laboratory. After heating at a...
Wedi'i Gadw mewn:
| Prif Awduron: | , , , , |
|---|---|
| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
IOP Publishing
2014-01-01
|
| Cyfres: | Materials Research Express |
| Pynciau: | |
| Mynediad Ar-lein: | https://doi.org/10.1088/2053-1591/1/1/015606 |
| Tagiau: |
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
|