Effects of Al on epitaxial graphene grown on 6H-SiC(0001)
Aluminum was deposited on epitaxial monolayer-grown graphene on SiC(0001). The effects of annealing up to 1200 °C on the surface and interface morphology, chemical composition, and electron band structure were analyzed in situ by synchrotron-based techniques at the MAX Laboratory. After heating at a...
Tallennettuna:
| Päätekijät: | , , , , |
|---|---|
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
IOP Publishing
2014-01-01
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| Sarja: | Materials Research Express |
| Aiheet: | |
| Linkit: | https://doi.org/10.1088/2053-1591/1/1/015606 |
| Tagit: |
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