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A Novel Isolation Approach for GaN-Based Power Integrated Devices

This paper introduces a novel technology for the monolithic integration of GaN-based vertical and lateral devices. This approach is groundbreaking as it facilitates the drive of high-power GaN vertical switching devices through lateral GaN HEMTs with minimal losses and enhanced stability. A signific...

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Enregistré dans:
Auteurs principaux: Zahraa Zaidan, Nedal Al Taradeh, Mohammed Benjelloun, Christophe Rodriguez, Ali Soltani, Josiane Tasselli, Karine Isoird, Luong Viet Phung, Camille Sonneville, Dominique Planson, Yvon Cordier, Frédéric Morancho, Hassan Maher
Format: Artigo
Langue:Inglês
Publié: MDPI AG 2024-09-01
Collection:Micromachines
Sujets:
vertical GaN FinFET
GaN HEMT (high electron mobility transistor)
TCAD-sentaurus
isolation
highly doped GaN
integrated circuits
Accès en ligne:https://www.mdpi.com/2072-666X/15/10/1223
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