A Novel Isolation Approach for GaN-Based Power Integrated Devices

This paper introduces a novel technology for the monolithic integration of GaN-based vertical and lateral devices. This approach is groundbreaking as it facilitates the drive of high-power GaN vertical switching devices through lateral GaN HEMTs with minimal losses and enhanced stability. A signific...

Бүрэн тодорхойлолт

Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	Zahraa Zaidan, Nedal Al Taradeh, Mohammed Benjelloun, Christophe Rodriguez, Ali Soltani, Josiane Tasselli, Karine Isoird, Luong Viet Phung, Camille Sonneville, Dominique Planson, Yvon Cordier, Frédéric Morancho, Hassan Maher
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	MDPI AG 2024-09-01
Цуврал:	Micromachines
Нөхцлүүд:	vertical GaN FinFET GaN HEMT (high electron mobility transistor) TCAD-sentaurus isolation highly doped GaN integrated circuits
Онлайн хандалт:	https://www.mdpi.com/2072-666X/15/10/1223
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!