Compact Modeling of Surface Potential, Drain Current and Terminal Charges in Negative Capacitance Nanosheet FET including Quasi-Ballistic Transport
In this article, we propose a compact model for Negative Capacitance Nanosheet Field Effect Transistor (NC-NSFET) including quasi-ballistic transport for sub-7nm technology node. The model captures the electrical characteristics of NC-NSFET for different ferroelectric thicknesses. Further, it captur...
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| Principais autores: | , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
IEEE
2020-01-01
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| Serier: | IEEE Journal of the Electron Devices Society |
| Fag: | |
| Online adgang: | https://ieeexplore.ieee.org/document/9178797/ |
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