Analysis of Circuit Simulation Considering Total Ionizing Dose Effects on FinFET and Nanowire FET
In this study, we analyzed the total ionizing dose (TID) effect characteristics of p-type FinFET and Nanowire FET (NW-FET) according to the structural aspect through comparison of the two devices. Similar to n-type devices, p-type NW-FETs are less affected than FinFETs by the TID effect. For the inv...
Gorde:
| Egile Nagusiak: | , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
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MDPI AG
2021-01-01
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| Saila: | Applied Sciences |
| Gaiak: | |
| Sarrera elektronikoa: | https://www.mdpi.com/2076-3417/11/3/894 |
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