Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals
Features of the concentration dependences of the anisotropy parameter of thermo-emf of electron-phonon drag M in germanium and silicon crystals of n-type conductivity were found in a wide range of charge carrier concentrations. Insensitivity of the anisotropy parameter M to the presence of impuritie...
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| Principais autores: | , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2017-04-01
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| coleção: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| Assuntos: | |
| Acesso em linha: | http://journal-spqeo.org.ua/n1_2017/P123-128abstr.html |
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