Features of tensoresistance in single crystals of germanium and silicon with different dopants
Tensoresistance in single crystals of germanium and silicon with different dopants but under practically equal charge carrier concentrations have been investigated. The features of X /0 = f (X) function, which depend on individual physical-chemical properties of dopants, have been discussed in thi...
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| Autor principal: | |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2015-04-01
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| coleção: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| Assuntos: | |
| Acesso em linha: | http://journal-spqeo.org.ua/n1_2016/P039-043abstr.html |
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