Atomic Layer-Deposited HfAlOx-Based RRAM with Low Operating Voltage for Computing In-Memory Applications
Abstract With Moore’s law closing to its physical limit, traditional von Neumann architecture is facing a challenge. It is expected that the computing in-memory architecture-based resistive random access memory (RRAM) could be a potential candidate to overcome the von Neumann bottleneck problem of t...
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| Главные авторы: | , , , , , , |
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| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
SpringerOpen
2019-02-01
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| Серии: | Nanoscale Research Letters |
| Предметы: | |
| Online-ссылка: | http://link.springer.com/article/10.1186/s11671-019-2875-4 |
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