Volatile Resistive Switching Characteristics of Pt/HfO<sub>2</sub>/TaO<i><sub>x</sub></i>/TiN Short-Term Memory Device
In this work, we study the threshold switching and short-term memory plasticity of a Pt/HfO<sub>2</sub>/TaO<i><sub>x</sub></i>/TiN resistive memory device for a neuromorphic system. First, we verify the thickness and elemental characterization of the device stack through transmission electron micros...
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| Autores principales: | , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
MDPI AG
2021-07-01
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| Colección: | Metals |
| Materias: | |
| Acceso en línea: | https://www.mdpi.com/2075-4701/11/8/1207 |
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