Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO<sub>2</sub>/TaO<i><sub>x</sub></i>/TiN Artificial Synaptic Device
Here, we propose a Pt/HfO<sub>2</sub>/TaO<i><sub>x</sub></i>/TiN artificial synaptic device that is an excellent candidate for artificial synapses. First, XPS analysis is conducted to provide the dielectric (HfO<sub>2</sub>/TaO<i><sub>x</sub></i>/TiN) information deposited by DC sputtering and atomi...
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| Autors principals: | , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI AG
2020-10-01
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| Col·lecció: | Nanomaterials |
| Matèries: | |
| Accés en línia: | https://www.mdpi.com/2079-4991/10/11/2159 |
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