Artificial Synapse Emulated by Indium Tin Oxide/SiN/TaN Resistive Switching Device for Neuromorphic System
In this paper, we fabricate an ITO/SiN/TaN memristor device and analyze its electrical characteristics for a neuromorphic system. The device structure and chemical properties are investigated using transmission electron microscopy and X-ray photoelectron spectroscopy. Uniform bipolar switching is ac...
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| Principais autores: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
MDPI AG
2023-09-01
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| Series: | Nanomaterials |
| Assuntos: | |
| Acceso en liña: | https://www.mdpi.com/2079-4991/13/17/2477 |
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