Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO<sub>2</sub> Layer
In this work, the enhanced resistive switching of ZrN-based resistive switching memory is demonstrated by embedding TiO<sub>2</sub> layer between Ag top electrode and ZrN switching layer. The Ag/ZrN/n-Si device exhibits unstable resistive switching as a result of the uncontrollable Ag migration. Bot...
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| Principais autores: | , |
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| 格式: | Artigo |
| 語言: | Inglês |
| 出版: |
MDPI AG
2020-09-01
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| 叢編: | Micromachines |
| 主題: | |
| 在線閱讀: | https://www.mdpi.com/2072-666X/11/10/905 |
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