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Direct Visualization of Charge Migration in Bilayer Tantalum Oxide Films by Multimodal Imaging

Abstract Inspired by biological neuromorphic computing, artificial neural networks based on crossbar arrays of bilayer tantalum oxide memristors have shown to be promising alternatives to conventional complementary metal‐oxide‐semiconductor (CMOS) architectures. In order to understand the driving me...

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Uloženo v:
Hlavní autoři: Matthew Flynn‐Hepford, John Lasseter, Ivan Kravchenko, Steven Randolph, Jong Keum, Bobby G. Sumpter, Stephen Jesse, Petro Maksymovych, A. Alec Talin, Matthew J. Marinella, Philip D. Rack, Anton V. Ievlev, Olga S. Ovchinnikova
Médium: Artigo
Jazyk:Inglês
Vydáno: Wiley-VCH 2024-01-01
Edice:Advanced Electronic Materials
Témata:
memristors
ReRAM
tantalum oxide
On-line přístup:https://doi.org/10.1002/aelm.202300589
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