Controlling Drain Side Tunneling Barrier Width in Electrically Doped PNPN Tunnel FET

In this paper, we propose and investigate an electrically doped (ED) PNPN tunnel field effect transistor (FET), in which the drain side tunneling barrier width is effectively controlled to obtain a suppressed ambipolar current. We present that the proposed PNPN tunnel FETs can be realized without ch...

Бүрэн тодорхойлолт

Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	Chan Shan, Lan Yang, Ying Liu, Zi-Meng Liu, Han Zheng
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	MDPI AG 2023-01-01
Цуврал:	Micromachines
Нөхцлүүд:	electrically doping PNPN tunnel FET ambipolar current tunneling barrier width TCAD simulation
Онлайн хандалт:	https://www.mdpi.com/2072-666X/14/2/301
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!