Controlling Drain Side Tunneling Barrier Width in Electrically Doped PNPN Tunnel FET

In this paper, we propose and investigate an electrically doped (ED) PNPN tunnel field effect transistor (FET), in which the drain side tunneling barrier width is effectively controlled to obtain a suppressed ambipolar current. We present that the proposed PNPN tunnel FETs can be realized without ch...

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Autors principals:	Chan Shan, Lan Yang, Ying Liu, Zi-Meng Liu, Han Zheng
Format:	Artigo
Idioma:	Inglês
Publicat:	MDPI AG 2023-01-01
Col·lecció:	Micromachines
Matèries:	electrically doping PNPN tunnel FET ambipolar current tunneling barrier width TCAD simulation
Accés en línia:	https://www.mdpi.com/2072-666X/14/2/301
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