Controlling Drain Side Tunneling Barrier Width in Electrically Doped PNPN Tunnel FET
In this paper, we propose and investigate an electrically doped (ED) PNPN tunnel field effect transistor (FET), in which the drain side tunneling barrier width is effectively controlled to obtain a suppressed ambipolar current. We present that the proposed PNPN tunnel FETs can be realized without ch...
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| Principais autores: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI AG
2023-01-01
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| coleção: | Micromachines |
| Assuntos: | |
| Acesso em linha: | https://www.mdpi.com/2072-666X/14/2/301 |
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