A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvement
Abstract This article presents a new line tunneling dominating metal–semiconductor contact-induced SiGe–Si tunnel field-effect transistor with control gate (CG-Line SiGe/Si iTFET). With a structure where two symmetrical control gates at the drain region are given a sufficient negative bias, the over...
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| Hauptverfasser: | , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Springer
2023-07-01
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| Schriftenreihe: | Discover Nano |
| Schlagworte: | |
| Online-Zugang: | https://doi.org/10.1186/s11671-023-03875-9 |
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