A novel ultra-steep subthreshold swing iTFET with control gate and control source biasing
Abstract In this paper, we propose a novel structure with Control Source and Control Gate structured tunnel field-effect transistor (CSCG‑iTFET), which achieves an unprecedentedly steep subthreshold swing (SS) while maintaining high ON-state current ( $$\:{I}_{\text{O}\text{N}}$$ ). In addition, usi...
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| Autors principals: | , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Portfolio
2025-08-01
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| Col·lecció: | Scientific Reports |
| Matèries: | |
| Accés en línia: | https://doi.org/10.1038/s41598-025-13011-5 |
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