Nanosheet integration of induced tunnel field-effect transistor with lower cost and lower power
Abstract Nanosheet transistors are poised to become the preferred choice for the next generation of smaller-sized devices in the future. To address the future demand for high-performance and low-power computing applications, this study proposes a nanosheet structure with a vertically stacked design,...
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| Principais autores: | , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Springer
2024-07-01
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| Serier: | Discover Nano |
| Fag: | |
| Online adgang: | https://doi.org/10.1186/s11671-024-04036-2 |
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