Nanosheet integration of induced tunnel field-effect transistor with lower cost and lower power
Abstract Nanosheet transistors are poised to become the preferred choice for the next generation of smaller-sized devices in the future. To address the future demand for high-performance and low-power computing applications, this study proposes a nanosheet structure with a vertically stacked design,...
Shranjeno v:
| Principais autores: | , |
|---|---|
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Springer
2024-07-01
|
| Serija: | Discover Nano |
| Teme: | |
| Online dostop: | https://doi.org/10.1186/s11671-024-04036-2 |
| Oznake: |
Brez oznak, prvi označite!
|