Design and TCAD Simulation of p+–n+ InAs‐Based TFET
ABSTRACT Tunnel field‐effect transistors (TFETs) are promising for ultra‐low‐power electronics, yet their practical adoption is hindered by limited ON‐current and strong sensitivity of band‐to‐band tunneling (BTBT) to geometry, doping, and quantum confinement, making physics‐accurate design optimiza...
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| Principais autores: | , , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Wiley-VCH
2026-03-01
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| Serier: | Nano Select |
| Fag: | |
| Online adgang: | https://doi.org/10.1002/nano.70130 |
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