Performance Analysis of L-Shaped Cladding Layer-Based Dopingless TFET Including Interface Trap Charges and Temperatures

This work investigates the impact of temperature variation and interface trap charges (ITCs) on the DC, RF/analog, and linearity performance of an L-shaped cladding layer-based dopingless TFET (LCD-TFET) using TCAD simulations. Key parameters including band-to-band tunneling (BTBT) rate, transconduc...

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Autors principals:	S. Shabareeshan, Srinidhi Balakrishnan, Shanidul Hoque, Rajesh Saha
Format:	Artigo
Idioma:	Inglês
Publicat:	IEEE 2026-01-01
Col·lecció:	IEEE Access
Matèries:	Band-to-band tunneling dopingless interface traps non-linearity subthreshold swing TFET
Accés en línia:	https://ieeexplore.ieee.org/document/11450363/
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